SIDC14D120H8 - Infineon

SIDC14D120H8 Fast switching diode

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.0 Final data sheet 2.1 Operating junction temperature 2.2 Editorial changes Date 26.10.2012 15.05.2013 14.10.2015 Edited by INFINEON Technologies, IPC.

Features

Recommended for: A
 1200V technology 120 µm chip
 power modules and discrete
 soft, fast switching devices
 low reverse recovery charge
 small temperature coefficient C
 qualified according to JEDEC for target Applications: applications
 SMPS, resonant applications, drives Chip Type SIDC14D120H8 VR IFn 1200V 25A Die Size 3.8 x 3.8 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 3.8 x 3.8 14.44 mm2 3.08 x 3.08 120 µm 200 mm 1906.