SI9433DY - Vishay Siliconix

SI9433DY P-Channel 20-V (D-S) MOSFET

Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.045 @ VGS = –4.5 V 0.070 @ VGS = –2.7 V ID (A) "5.4 "4.2 S S S SO-8 S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuou.

Features

Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "12 V VDS =
  –16 V, VGS = 0 V VDS =
  –10 V, VGS = 0 V, TJ = 70_C VDS v
  –5 V, VGS =
  –4.5 V VDS v
  –5 V, VGS =
  –2.7 V VGS =
  –4.5 V, ID =
  –5.1 A VGS =
  –2.7 V, ID =
  –2.0 A VDS =
  –9 V, ID =
  –5.1 A IS =
  –2.6 A, VGS = 0 V
  –20 A
  –5 0.032 0.052 15
  –0.76
  –1.2 0.045 0.070 W S V
  –0.8 "100
  –1
  –5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb .