SI9420DY - Vishay Siliconix

SI9420DY N-Channel Enhancement-Mode MOSFET

Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(ON) (W) 1.0 @ VGS = 10 V ID (A) "1.0 D D D D SO-8 N/C S S G 1 2 3 4 Top View S S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Pul.

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aurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 50 UNIT _C/W 1 Si9420DY Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentB Drain-Source On-State ResistanceB Forward TransconductanceB Diode Forward VoltageB DYNAMICA Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Ti.