SI9435BDY - Vishay Siliconix

SI9435BDY P-Channel 30-V (D-S) MOSFET

Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = −10 V −30 0.055 @ VGS = −6 V 0.070 @ VGS = −4.5 V FEATURES ID (A) −5.7 −5.0 −4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel M.

Features

ID (A) −5.7 −5.0 −4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −.