SI9407AEY - Vishay Telefunken

SI9407AEY P-Channel 60-V (D-S)/ 175C MOSFET

Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.120 @ VGS = –10 V 0.15 @ VGS = –4.5 V ID (A) "3.5 "3.1 S S S SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Cont.

Features

E NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –-60 V, VGS = 0 V VDS =
  –-60 V, VGS = 0 V, TJ = 55_C VDS v
  –5 V, VGS =
  –10 V VGS =
  –10 V, ID = 3.5 A VGS =
  –4.5 V, ID = 3.1 A VDS =
  –15 V, ID =
  –3.5 A IS =
  –2.5 A, VGS = 0 V 8
  –1.2
  –20 0.120 0.150
  –1 "100
  –1
  –10 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charg.