Si9407DY - TEMIC

Si9407DY P-Channel MOSFET

P-Channel Enhancement-Mode MOSFET Si9407DY Product Summary VDS (V) –60 rDS(on) (W) 0.150 @ VGS = –10 V 0.240 @ VGS = –4.5 V SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View ID (A) "3.0 "2.4 SSS G DDDD P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuou.

Features

eet is available for this product (FaxBack document #5129). Siliconix 1 S-47958—Rev. E, 15-Apr-96 Si9407DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –48 V, VGS = 0 V VDS =
  –48 V, VGS = 0 V, TJ = 55_C VDS v
  –5 V, VGS =
  –10 V VGS =
  –10 V, ID = 3.0 A VGS =
  –4.5.