Si9435DY - Vishay

Si9435DY P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET Si9435DY Vishay Siliconix PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.055 @ VGS = –10 V 0.07 @ VGS = –6 V 0.105 @ VGS = –4.5 V S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D ID (A) "5.1 "4.6 "3.6 SSS G DDDD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Ga.

Features

.vishay.com S FaxBack 408-970-5600 1 Si9435DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –24 V, VGS = 0 V VDS =
  –15 V, VGS = 0 V, TJ = 70_C VDS v
  –10 V, VGS =
  –10 V VDS v
  –5 V, VGS =
  –4.5 V VGS =
  –10 V, ID =
  –4.6 A VGS =
  –6 V, ID =
  –4.1 A VGS = .