SI6880EDQ - Vishay Siliconix

SI6880EDQ N-Channel MOSFET

Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.018 @ VGS = 4.5 V 20 0.022 @ VGS = 2.5 V 0.026 @ VGS = 1.8 V FEATURES ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S.

Features

ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel
*Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 G2
*1.5 kW G1 G2
*1.5 kW Si6880EDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range.