SI6820DQ - Vishay Siliconix

SI6820DQ N-Channel Reduced Qg / MOSFET with Schottky Diode

Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.160 @ VGS = 4.5 V 0.260 @ VGS = 3.0 V ID (A) "1.9 "1.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (v) Diode Forward Voltage 0.5 V @ 1 A IF (A) 1.5 D K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A S A G Si6820DQ 7 6 5 ABSOLUTE MAX.

Features

0.64
  –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 115 130 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70790 S-56936—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-1 Si6820DQ Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drai.