SI6801DQ - Vishay Siliconix

SI6801DQ Fast Switching MOSFET

Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) 0.160 @ VGS = 4.5 V 0.260 @ VGS = 3.0 V 0.190 @ VGS = –4.5 V 0.280 @ VGS = –3.0 V ID (A) "1.9 "1.5 "1.7 "1.3 TSSOP-8 D1 1 D S1 2 S1 3 Si6801DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 D1 G1 S1 N-Channel MOSFET .

Features

ment Number: 70187 S-56944—Rev. D, 23-Nov-98 Symbol RthJA N- or P-Channel 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6801DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID =
  –250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb IDSS ID(on) rDS(on) gfs VSD VDS = 20 V, VGS = 0 V VDS =
  –20 V, V.