www.vishay.com Si5948DU Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. 0.082 at VGS = 10 V 0.094 at VGS = 4.5 V ID (A) 6a 6a Qg (TYP.) 2.2 nC PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1 3.0 mm Top View 1 4 G2 3 S2 2 G1 S1 Bottom View 1.9 mm Marking Code: CG Ordering Information: Si5948DU.
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• New thermally enhanced PowerPAK®
ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC power supply
D1 D2
G1
N-Channel MOSFET S1
G2
N-Channel MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5941DU |
Vishay Siliconix |
Dual P-Channel 8-V (D-S) MOSFET | |
2 | SI5943DU |
Vishay Siliconix |
Dual P-Channel 12-V (D-S) MOSFET | |
3 | SI5944DU |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI5945DU |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
5 | SI590 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
6 | SI5902BDC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
7 | SI5902DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI5903DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
9 | SI5904DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
10 | SI5905BDC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
11 | SI5905DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
12 | SI5906DU |
Vishay Siliconix |
Dual N-Channel MOSFET |