SI4936CDY - Vishay Siliconix

SI4936CDY Dual N-Channel MOSFET

www.DataSheet.co.kr New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.040 at VGS = 10 V 0.050 at VGS = 4.5 V ID (A)d 5.8 2.8 nC 5.5 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET APPLICATIONS • Low Current DC/DC Conversion • Notebook Syste.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 D2 G1 G2 S1 Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C.