Dual P-Channel 12-V (D-S) MOSFET Si4931DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.018 at VGS = - 4.5 V - 12 0.022 at VGS = - 2.5 V 0.028 at VGS = - 1.8 V ID (A) - 8.9 - 8.1 - 3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-fre.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
S1
S2
G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 8.9 - 7.1
- 6.7 - 5.4
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4933DY |
Vishay Siliconix |
Dual P-Channel MOSFET | |
2 | SI4936ADY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
3 | SI4936CDY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | Si4936DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
5 | SI4900DY |
Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET | |
6 | SI4904DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
7 | SI4908DY |
Vishay Siliconix |
Dual N-Channel 40-V (D-S) MOSFET | |
8 | SI4910DY |
Vaishali Semiconductor |
Dual N-Channel 40-V (D-S) MOSFET | |
9 | SI4911DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
10 | SI4913DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
11 | SI4914BDY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
12 | SI4914DY |
Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET |