SI4936ADY - Vishay Siliconix

SI4936ADY Dual N-Channel MOSFET

Dual N-Channel 30-V (D-S) MOSFET Si4936ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.036 at VGS = 10 V 0.053 at VGS = 4.5 V ID (A) 5.9 4.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering I.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free) Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 5.9 4.4 4.7 3.6 Pulsed Drai.