SI4848DY - Vishay Siliconix

SI4848DY N-Channel MOSFET

N-Channel 150-V (D-S) MOSFET Si4848DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.085 at VGS = 10 V 0.095 at VGS = 6.0 V ID (A) 3.7 3.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4848.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free) Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 3.7 2.7 3.0 2.1 Pulsed Drain Current IDM 25 Avalanche Current L = 0.1 m.