SI4840DY - Vishay Siliconix

SI4840DY N-Channel MOSFET

N-Channel 40-V (D-S) MOSFET Si4840DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 14 12 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4840DY-T1-E3 (Lead (Pb)-free) Si4840DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definit.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 14 11 10 8 Pulsed Drain Current IDM 50 Avalanche Current Avalanche Energy (Single Pulse) L = 0.1 mH IAS EAS 30 45 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa.