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SI4435BDY |
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| Part Number | SI4435BDY |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such pr... |
| Features |
ID (A)
−9.1 −6.9
rDS(on) (W)
0.020 @ VGS = −10 V 0.035 @ VGS = −4.5 V
D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant
Available
APPLICATIONS
D Load Switches D Battery Switch
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximu... |
| Document |
 SI4435BDY Data Sheet
PDF 88.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si4435 |
Nanxin |
P-Channel Enhancement MOSFET |
|
| 2 | SI4435DY |
International Rectifier |
Power MOSFET |
|
| 3 | SI4435DY |
Kexin |
P-Channel MOSFET |
|
| 4 | SI4435DY |
Fairchild Semiconductor |
30V P-Channel MOSFET |
|
| 5 | SI4435DYPBF |
International Rectifier |
HEXFET Power MOSFET |
|