SI1912EDH - Vishay Siliconix

SI1912EDH Dual N-Channel MOSFET

Dual N-Channel 20 V (D-S) MOSFET Si1912EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0 SOT-363 SC-70 (6-LEADS) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhance.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• ESD Protected: 2000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switching
• PA Switch
• Level Switch D1 D2 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Marking Code CA XX YY Lot Traceability and Date Code G1 Part # Code 1k 1k G2 Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Drain-Source Volt.