SI1903DL - Vishay Siliconix

SI1903DL Dual P-Channel 2.5-V (G-S) MOSFET

Si1903DL Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.995 @ VGS = -4.5 V -20 1.190 @ VGS = -3.6 V 1.80 @ VGS = -2.5 V ID (A) "0.44 "0.40 "0.32 www.DataSheet4U.com SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code QA G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMU.

Features

Number: 71081 S-21374—Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Si1903DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -0.41 A rDS(on) VGS = -3.6 V, ID = -0.38 A VGS = -2.5 V, ID = -0.25 A Forwa.