SI1906DL - Vishay Siliconix

SI1906DL N-Channel MOSFET

Si1906DL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V ID (mA) 250 150 SOT-363 SC-70 (6-Leads) Marking Code PC G1 D2 2 3 5 4 G2 S2 XX YY Lot Traceability and Date Code Part # Code S1 1 6 D1 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par.

Features

rameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.0 V, VGS = 2.5 V VDS = 8.0 V, VGS = 4.5 V VGS = 2.5 V, ID = 150 mA VGS = 4.5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V 120 400 160 mA 800 1.6 1.2 200 0.7 1.2 2.5 2.0 mS V W 20 0.4 24 V 0.9 "2 0.001 1.5 "100 100 5 mA nA Symbol Test Condition Min .