SI1905DL - Vishay Siliconix

SI1905DL Dual P-Channel MOSFET

Dual P-Channel 1.8 V (G-S) MOSFET Si1905DL Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.600 at VGS = - 4.5 V 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V ID (A) ± 0.60 ± 0.50 ± 0.42 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-7.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code YY QB XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1905DL-T1-E3 (Lead (Pb)-free) Si1905DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Cond.