and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawin.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-363 SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Marking Code
YY
PB XX
Lot Traceability and Date Code
Part # Code
Top View
Ordering Information: Si1900DL-T1-E3 (Lead (Pb)-free) Si1900DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
Pulsed Drain Current
Continuous Source-Cu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1901DL |
Vishay Siliconix |
P-Channel MOSFET | |
2 | Si1902CDL |
Vishay |
Dual N-Channel MOSFET | |
3 | SI1902DL |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI1903DL |
Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET | |
5 | SI1904EDH |
Vishay Siliconix |
DUAL N-CHANNEL 25-V (D-S) MOSFET | |
6 | SI1905DL |
Vishay Siliconix |
Dual P-Channel MOSFET | |
7 | SI1906DL |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SI1907DL |
Vishay Siliconix |
Dual P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1912EDH |
Vishay Siliconix |
Dual N-Channel MOSFET | |
10 | SI1913DH |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
11 | SI1913EDH |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
12 | SI1917EDH |
Vishay Siliconix |
Dual P-Channel MOSFET |