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SGB15N60HS ^ High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temp.
time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1)
2)
ICpul s VGE tSC Ptot Tj ,Tstg Tj(tl) -
60 60 ±20 ±30 10 138 -55...+150 175 245 V µs W °C
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev 2.3 Oct 06
Power Semiconductors
Free Datasheet http://www.datasheet4u.com/
SGB15N60HS
^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case The.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGB15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 2 | SGB15N120 |
Infineon |
Fast IGBT |
|
| 3 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 4 | SGB10N60 |
Infineon Technologies Corporation |
Fast S-igbt in Npt-technology |
|
| 5 | SGB10N60A |
Infineon Technologies AG |
Fast IGBT |
|
| 6 | SGB10UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block |
|
| 10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block |
|
| 12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |
|