SGP15N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching ca.
-55...+150 °C
1)
VCE 600V
IC 15A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235
Symbol VCE IC
Value 600 31 15
Unit V A
ICpul s VGE EAS
62 62 ±20 85 V mJ
tSC Ptot
10 139
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SGP15N60,
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case Thermal resistance, junction
– ambient SMD version, device on PCB
1)
SGB15N60 SGW15N60
Max. Value Unit
Symbol
Conditions
Rth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGB15N60HS |
Infineon |
High Speed IGBT | |
2 | SGB15N120 |
Infineon |
Fast IGBT | |
3 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER | |
4 | SGB10N60 |
Infineon Technologies Corporation |
Fast S-igbt in Npt-technology | |
5 | SGB10N60A |
Infineon Technologies AG |
Fast IGBT | |
6 | SGB10UF |
SSDI |
HIGH VOLTAGE RECTIFIER | |
7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block | |
8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK | |
9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block | |
10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK | |
11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block | |
12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |