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SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching c.
= 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1)
Symbol VCE IC
ICpuls VGE EAS
tSC Ptot Tj , Tstg
Value
Unit
600
V
A 20 10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
245
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07
SGB10N60A
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction
– case Thermal resistance, junction
– ambient1)
Symbol RthJC RthJA
Conditions
Max. Value
Unit
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGB10N60 |
Infineon Technologies Corporation |
Fast S-igbt in Npt-technology |
|
| 2 | SGB10UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 3 | SGB15N120 |
Infineon |
Fast IGBT |
|
| 4 | SGB15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 5 | SGB15N60HS |
Infineon |
High Speed IGBT |
|
| 6 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block |
|
| 10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block |
|
| 12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |
|