Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet FEATURES: • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micr.
• Ultra Fast Recovery: 60nsec Maximum
• PIV to 3500 Volts
• Hermetically Sealed
• Void-Free Construction
• Metallurgically Bonded
• 175°C Maximum Operating Temperature
• Micro Miniature Package
• TX, TXV, and Space Level Screening Available
SGB10UF and
SGB35UF
60 mA 1000 - 3500 VOLTS
60 nsec HIGH VOLTAGE
RECTIFIER
AXIAL
ELECTRICAL CHARACTERISTICS
Part Number
Symbol Units
Peak Inverse Voltage
PIV
Volts
Average Rectifier Current
I0
mA
Maximum Reverse Current
IR @ PIV
µA
Maximu m
Forward Voltage
VF 2/
Volts
Conditions
25°C 100°C 25°C 100°C 25°C
SGB10UF 1000 60 45 0.1 10 SGB15UF 1500 60.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGB10N60 |
Infineon Technologies Corporation |
Fast S-igbt in Npt-technology |
|
| 2 | SGB10N60A |
Infineon Technologies AG |
Fast IGBT |
|
| 3 | SGB15N120 |
Infineon |
Fast IGBT |
|
| 4 | SGB15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 5 | SGB15N60HS |
Infineon |
High Speed IGBT |
|
| 6 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block |
|
| 10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block |
|
| 12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |
|