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SGP15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGP15N120 SGW15N120 C G E P-TO-220-3-.
Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 15A
Eoff 1.5mJ
Tj 150°C
Package TO-220AB TO-263AB(D2PAK) TO-247AC
Ordering Code Q67040-S4274 Q67040-S4275 Q67040-S4276
Symbol VCE IC
Value 1200 30 15
Unit V A
ICpul s VGE EAS tSC Ptot
52 52 ±20 85 10 198 V mJ µs W
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Free Datasheet http://www.datasheet4u.com/
Power Semiconductors
SGP15N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case Thermal resistance, junction
– ambient S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGB15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 2 | SGB15N60HS |
Infineon |
High Speed IGBT |
|
| 3 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 4 | SGB10N60 |
Infineon Technologies Corporation |
Fast S-igbt in Npt-technology |
|
| 5 | SGB10N60A |
Infineon Technologies AG |
Fast IGBT |
|
| 6 | SGB10UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block |
|
| 10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block |
|
| 12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |
|