Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperat.
g junction and storage temperature
1)
ICpul s VGE EAS
42 42 ±20 70 V mJ
tSC Ptot Tj , Tstg
10 104 -55...+150
µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00
SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Symbol Conditions Max. Value Unit
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case Thermal resistance, junction
– ambient SMD version, device on PCB
1)
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB
1.2 62 40 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGB10N60A |
Infineon Technologies AG |
Fast IGBT |
|
| 2 | SGB10UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 3 | SGB15N120 |
Infineon |
Fast IGBT |
|
| 4 | SGB15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 5 | SGB15N60HS |
Infineon |
High Speed IGBT |
|
| 6 | SGB15UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 7 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 8 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 9 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block |
|
| 10 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
| 11 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block |
|
| 12 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block |
|