SCTW40N120G2VAG - STMicroelectronics

SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW40N120G2VAG Product su.

Features

Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resis.