SCTWA35N65G2V4AG - STMicroelectronics

SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA35N65G2V4AG Product s.

Features

Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB)
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Low capacitances
• Source sensing pin for increased efficiency
• Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technol.