SCTW35N65G2V - STMicroelectronics

SCTW35N65G2V Silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2V Product summa.

Features

Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200°C) Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss i.