SCTWA40N120G2AG - STMicroelectronics

SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET

S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA4.

Features

Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1)
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C) Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) Description S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resis.