SCTWA35N65G2VAG - STMicroelectronics

SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA35N65G2VAG Product su.

Features

Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Low capacitance D(2, TAB) G(1) S(3) Applications
• Switching mode power supply
• EV chargers
• DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction tem.