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SCTW40N120G2VAG |
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| Part Number | SCTW40N120G2VAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTW40N120G2VAG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
HiP247
3 2 1
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resis... |
| Document |
 SCTW40N120G2VAG Data Sheet
PDF 227.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCTW40N120G2V |
STMicroelectronics |
Silicon carbide Power MOSFET |
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| 2 | SCTW100N120G2AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 3 | SCTW100N65G2AG |
STMicroelectronics |
silicon carbide Power MOSFET |
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| 4 | SCTW35N65G2V |
STMicroelectronics |
Silicon carbide Power MOSFET |
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| 5 | SCTW35N65G2VAG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|