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SCTW35N65G2V |
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| Part Number | SCTW35N65G2V |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCTW35N65G2V
650 V
67 mΩ
45 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss i... |
| Document |
 SCTW35N65G2V Data Sheet
PDF 200.35KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | SCTW35N65G2VAG |
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