RT3TTTM - Isahaya Electronics Corporation

RT3TTTM Transistor

RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. OUTLINE DRAWING FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit Unit：mm ⑥⑤ RTr1 R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTOR ①.

Features

AHAYA ELECTRONICS CORPORATION RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) R1 Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=0.5mA,IB=0.05mA - fT Gain band width product VCE=6V,IE=10mA ※PNP built in transistor of ”－”sign is abbreviation. RTr1 RTr2 Min 50 - 100 - 140 - Limits Ty.