RT3T11M - Isahaya Electronics Corporation

RT3T11M Transistor

RT3T11M is a composite transistor built with RT1N141 chip and RT1P141 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 RT.

Features

STICS (Ta=25 ) Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product Test conditions IC=100 A,RBE= VCB =50V,IE=0 VCE=5V,IC=10mA IC=10mA,IB=0.5mA VCE=0.2V,IC=5mA VCE=5V,IC=100 A VCE=6V,IE=-10mA RT3T11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Unit Min Typ Max 50 - -V - - 0.1 A 50 - -- - 0.1 0.3 V - 1.5.