RT3T14M - Isahaya Electronics Corporation

RT3T14M Transistor

RT3T14M is a composite transistor built with RT1N144 chip and RT1P144 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 PN.

Features

NICS CORPORATION PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25 ) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product IC=100 A,RBE= VCB =50V,IE=0 VCE=5V,IC=5mA IC=10mA,IB=5mA VCE=0.2V,IC=5mA VCE=5V,IC=100 A - VCE=6V,IE=-10mA Tr1 Tr2 Limits Uni.