RT3T11U is a composite transistor built with RT1N141 chip and RT1P141 chip in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.
-55~+150 UNIT V V V mA mA mW ℃ ℃ MARKING 654 11 123 ISAHAYA ELECTRONICS CORPORATION RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1,Tr2 common) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product I C=100µA,RBE=∞ VCB=50V,I E =0mA VCE=5V,I C=10mA I C=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RT3T11M |
Isahaya Electronics Corporation |
Transistor | |
2 | RT3T14M |
Isahaya Electronics Corporation |
Transistor | |
3 | RT3T1CU |
Isahaya Electronics Corporation |
Transistor | |
4 | RT3T22M |
Isahaya Electronics Corporation |
Transistor | |
5 | RT3T33M |
Isahaya Electronics Corporation |
Transistor | |
6 | RT3T55M |
Isahaya Electronics Corporation |
Transistor | |
7 | RT3T55U |
Isahaya Electronics Corporation |
Transistor | |
8 | RT3T66M |
ETC |
Transistor | |
9 | RT3T66M |
Isahaya Electronics Corporation |
Transistor | |
10 | RT3T77M |
Isahaya Electronics Corporation |
Transistor | |
11 | RT3TAAM |
Isahaya Electronics Corporation |
Transistor | |
12 | RT3TBBM |
Isahaya Electronics Corporation |
Transistor |