RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. OUTLINE DRAWING Unit:mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit . ⑥ RTr1 ⑤ R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTO.
54 .T7 7 123 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) R1 Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=10mA,IB=0.5mA - fT Gain band width product VCE=6V,IE=10mA ※PNP built in transistor of ”-”sign is abbreviation. RTr1 RTr2 Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RT3T11M |
Isahaya Electronics Corporation |
Transistor | |
2 | RT3T11U |
Isahaya Electronics Corporation |
Transistor | |
3 | RT3T14M |
Isahaya Electronics Corporation |
Transistor | |
4 | RT3T1CU |
Isahaya Electronics Corporation |
Transistor | |
5 | RT3T22M |
Isahaya Electronics Corporation |
Transistor | |
6 | RT3T33M |
Isahaya Electronics Corporation |
Transistor | |
7 | RT3T55M |
Isahaya Electronics Corporation |
Transistor | |
8 | RT3T55U |
Isahaya Electronics Corporation |
Transistor | |
9 | RT3T66M |
ETC |
Transistor | |
10 | RT3T66M |
Isahaya Electronics Corporation |
Transistor | |
11 | RT3TAAM |
Isahaya Electronics Corporation |
Transistor | |
12 | RT3TBBM |
Isahaya Electronics Corporation |
Transistor |