RT3T55M - Isahaya Electronics Corporation

RT3T55M Transistor

RT3T55M is a composite transistor built with RT1N141 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 PN.

Features

RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25 ) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage VI(OFF) Input off voltage R1 Input resistor R2/R1 Resistor ratio fT Gain band width product TYPICAL CHARACTERISTICS Tr1 IC=100µA,RBE=∞ VCB =50V,IE=0 Tr1 VCE=5V I C=10mA Tr2 VCE=5V I C=5mA IC=10mA,IB=0.5mA VCE=0.2V I C=5mA VCE=5V I C=100µA VCE=.