RT3T55M |
Part Number | RT3T55M |
Manufacturer | Isahaya Electronics Corporation |
Description | RT3T55M is a composite transistor built with RT1N141 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OU... |
Features |
RT3T55M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 )
Symbol
Parameter
Test conditions
V(BR)CEO ICBO hFE
VCE(sat) VI(ON)
Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage
VI(OFF)
Input off voltage
R1 Input resistor
R2/R1
Resistor ratio
fT Gain band width product
TYPICAL CHARACTERISTICS Tr1
IC=100µA,RBE=∞
VCB =50V,IE=0
Tr1 VCE=5V I C=10mA Tr2 VCE=5V I C=5mA
IC=10mA,IB=0.5mA VCE=0.2V I C=5mA VCE=5V I C=100µA VCE=... |
Document |
RT3T55M Data Sheet
PDF 95.81KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RT3T55U |
Isahaya Electronics Corporation |
Transistor | |
2 | RT3T11M |
Isahaya Electronics Corporation |
Transistor | |
3 | RT3T11U |
Isahaya Electronics Corporation |
Transistor | |
4 | RT3T14M |
Isahaya Electronics Corporation |
Transistor | |
5 | RT3T1CU |
Isahaya Electronics Corporation |
Transistor |