RN2610 - Toshiba

RN2610 Silicon PNP Epitaxial Type Transistor

RN2610 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2610 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including twodevices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process.

Features

perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating 1 © 2019 Toshiba Electronic Devices & Storage Corporation St.