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RN2610 |
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| Part Number | RN2610 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2610 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2610 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including ... |
| Features |
perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating
1
© 2019 Toshiba Electronic Devices & Storage Corporation
St... |
| Document |
 RN2610 Data Sheet
PDF 422.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN2601 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | RN2602 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2603 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2604 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2605 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|