RN2607 - Toshiba

RN2607 Silicon PNP Epitaxial Type Transistor

RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manu.

Features

2607 RN2608 Collector current Collector power dissipation Junction temperature Storage temperature range VCBO −50 V VCEO −50 V −6 VEBO V −7 IC −100 mA PC
* 300 mW Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabili.