RN2609 - Toshiba Semiconductor

RN2609 Silicon PNP Transistor

RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complemen.

Features

(Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2607~RN2609 RN2607 Emitter cut-off current RN2608 RN2609 RN2607 DC current gain RN2608 RN2609 Collector-emitter saturation voltage RN2607~RN2609 RN2607 Input voltage (ON) RN2608 RN2609 RN2607 Input voltage (OFF) RN2608 RN2609 Translation frequency Collector output capacitance RN2607~RN2609 RN2607~RN2609 RN2607 Input resistor RN2608 RN2609 RN2607 Resistor ratio RN2608 RN2609 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = −10V, IC = −5.