RN2601 - Toshiba

RN2601 Silicon PNP Epitaxial Type Transistor

RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circu.

Features

e Collector current Collector power dissipation Junction temperature Storage temperature range RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606 RN2601 to RN2606 VCBO VCEO VEBO IC PC
* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 C −55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ra.