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PIN diode RN262CS zApplications High frequency switching zDimensions (Unit : mm) zLand size figure (Unit : mm) 0.55 0.45 0.45 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (CT). VMN2 zStructure zConstruction Silicon epitaxial planar zTaping dimensions (Unit : mm) zAbsolute maximum ratings (T.
1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (CT). VMN2 zStructure zConstruction Silicon epitaxial planar zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage Forward current Power dissipation VR IF Pd Junction temperature Tj Storage temperature Tstg Limits 30 100 100 150 -55 to +150 Unit V mA mW °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - - 1 IR - - 0.1 Ct - - 0.4 High frequency resi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN262G |
ROHM |
PIN diode |
|
| 2 | RN2601 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2602 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2603 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2604 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 6 | RN2605 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 7 | RN2606 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 8 | RN2607 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 9 | RN2608 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 10 | RN2609 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 11 | RN2610 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 12 | RN2001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|