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RN2607 |
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| Part Number | RN2607 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: m... |
| Features |
2607 RN2608
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
−6
VEBO
V
−7
IC
−100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabili... |
| Document |
 RN2607 Data Sheet
PDF 752.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN2601 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | RN2602 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2603 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2604 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2605 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|