RJK5002DJE |
Part Number | RJK5002DJE |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID Note1 ID(pulse) Note3 IDR Note1 IDR(pulse) Note3 Pch Note 2 Channel to ambient thermal Impedance ch-a Channel temperature Tch Storage temperature Tstg Notes: 1. Limite... |
Document |
RJK5002DJE Data Sheet
PDF 63.62KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK5003DPD |
Renesas Technology |
Silicon N Channel Power MOS FET | |
2 | RJK5009DPP |
Renesas Technology |
Silicon N Channel Power MOS FET | |
3 | RJK5012DPE |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | RJK5012DPP |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | RJK5012DPP-A0 |
Renesas |
MOSFET |